High speed silicon lateral trench detector on SOI substrate

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979565

Min Yang, Jeremy D. Schaub, Dennis L. Rogers, M. B. Ritter, K. Rim, J. J. Welser, Byeongju Park

引用次数: 16

Abstract

Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.

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基于SOI衬底的高速硅横向沟槽探测器

采用完全兼容CMOS的工艺制备了绝缘体上硅(SOI)的横向沟槽光电探测器(LTD)。在851 nm下，以3.3 V的电源电压实现了高速(2.0 GHz)、高量子效率(51%)和优异的频率响应特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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