Design and sensitivity analysis of a single sided pumped THz booster

Abstract

We present the design of a THz driven booster which is capable of accelerating electrons from 55 keV up to above 430 keV kinetic energy. This device is a 3-layer segmented structure and requires a 400-µJ single-cycle THz pulse with center frequency at 300 GHz. Sensitivity of the output beam dynamics to the input parameters and manufacturing tolerances of the booster is also investigated in this paper.