Estimation of minority carrier lifetime in InGaN single junction solar cell

Abstract

The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.