Effect of interfacial phonon-plasmon modes on electrical transport in supported graphene

Abstract

This paper discusses the effects of interfacial phonon-plasmon modes on electrical transport in supported graphene. The mobility in graphene supported on an insulating dielectric substrate (such as SiO2) is typically due to scattering by charged impurities, surface roughness and surface polar phonon (SPP) modes. Although impurity scattering is the dominant factor limiting electron mobility it can be reduced experimentally. Coupling between the SPP and graphene plasmon modes leads to the formation of interfacial phonon-plasmon (lPP) modes which can also be interpreted as screened SPP modes. IPP dispersion and electron-IPP scattering rates were used for different substrates (SiO2, h-BN, HfO2 and Al2O3) to calculate the substrate-limited conductivity and field mobility of supported graphene.