Innovation of 300 mm fab manufacturing with single wafer technology

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979578

C. Chen, T. Lin, J. Jung, N. Yabuoshi, Y. Sasaki, K. Komori, H. Shih, Chao Min Liao, M. Funabashi, N. Suzuki, Y. Ishii, T. Uchino, K. Nemoto, H. Yamamoto, S. Nishihara, S. Sasabe, A. Koike, S. Ikeda, J. Tsao

引用次数: 4

Abstract

In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.

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300毫米单晶圆制造技术的创新

本文讨论了在300mm晶圆厂实现全单晶圆工艺的新技术。在单多晶硅三金属8M/4M低功率SRAM中，已经证明了非常积极的周期时间缩短和高成品率(传统晶圆厂的三分之一周期时间)。实现了具有优异可靠性的高性能器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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