Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation

Abstract

The double gate (DG) MOSFET and similar structures provide the electrostatic integrity needed to scale devices to their limits. In this paper, we use a non-equilibrium Green's function (NEGF) approach to examine 10 nm-scale device design and manufacturing issues realistically. NEGF simulations are used to examine: (i) choice of body thickness, (ii) effect of body thickness variations, (iii) the required junction abruptness, (iv) sensitivity of the device to gate-S/D (source/drain) over/underlap, and (v) the impact of metal-semiconductor contact resistance. The results of this study identify key device challenges for 10 nm-scale MOSFETs.