Analytical Electron Microscopy of Silicon Nitride Nanostructures Synthesized from the Vapor Phase

IF 3.9 Q2 NANOSCIENCE & NANOTECHNOLOGY
Mariella Cortez Caillahua, F. J. Moura, G. Solórzano
{"title":"Analytical Electron Microscopy of Silicon Nitride Nanostructures Synthesized from the Vapor Phase","authors":"Mariella Cortez Caillahua, F. J. Moura, G. Solórzano","doi":"10.32829/nanoj.v3i1.87","DOIUrl":null,"url":null,"abstract":"Silicon nitride, Si3N4 is a covalent compound with excellent physical and chemical properties such as corrosion resistance, low-specific weight and good thermal conductivity at ambient and elevated temperatures. Such properties are very attractive in application as advanced ceramics and in semiconductor devise [1]. Nano sized amorphous silicon nitride powders were synthesized at 300 °C by precipitation from the vapor phase reaction of SiCl4 and NH3 and Ar as carrier gas. Solid ammonium halogenide is formed as by-product, in addition to silicon nitride powder.","PeriodicalId":16378,"journal":{"name":"Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":3.9000,"publicationDate":"2019-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.32829/nanoj.v3i1.87","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0

Abstract

Silicon nitride, Si3N4 is a covalent compound with excellent physical and chemical properties such as corrosion resistance, low-specific weight and good thermal conductivity at ambient and elevated temperatures. Such properties are very attractive in application as advanced ceramics and in semiconductor devise [1]. Nano sized amorphous silicon nitride powders were synthesized at 300 °C by precipitation from the vapor phase reaction of SiCl4 and NH3 and Ar as carrier gas. Solid ammonium halogenide is formed as by-product, in addition to silicon nitride powder.
气相合成氮化硅纳米结构的分析电镜研究
氮化硅(Si3N4)是一种共价化合物,具有优异的物理和化学性能,如耐腐蚀、低比重量和良好的室温和高温导热性。这些特性在高级陶瓷和半导体器件等方面的应用非常有吸引力[1]。以SiCl4和NH3气相反应,以Ar为载气,在300℃的温度下沉淀,合成了纳米非晶态氮化硅粉体。除了氮化硅粉末外,还会形成固体卤化铵。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Nanotechnology
Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-
CiteScore
5.50
自引率
2.40%
发文量
25
审稿时长
13 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信