Zhenhua Hu, Maliang Liu, R. Ding, Zhang‐ming Zhu, Yin-tang Yang
{"title":"The Ultra-Wideband 0.5-15GHz LNA for Reconfigurable Receiver System in 28 nm CMOS","authors":"Zhenhua Hu, Maliang Liu, R. Ding, Zhang‐ming Zhu, Yin-tang Yang","doi":"10.1109/ICSICT49897.2020.9278188","DOIUrl":null,"url":null,"abstract":"A 0.5-8GHz LNA and an 8-15GHz LNA connected by the active switch used in the Ultra-Wideband (UWB) reconfigurable receiver are presented in this paper. The common drain stage and resistance negative feedback technology as well as the source degeneration inductive technology are introduced to achieve a high flat gain and fine input matching. The current-reused technique is adopted to improve the gain and the noise characteristics. The 0.5-8GHz LNA I achieves a high flat gain of 22.32-24.56 dB, a noise figure (NF) of 3.69-4.52 dB and the S11 batter than -10.78 dB across the band. The 8-15GHz LNA II achieves a high flat gain of 24.3-26.59 dB, a NF of 3.80-4.51 dB and the S11 batter than -12.56 dB in the frequency band.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"50 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT49897.2020.9278188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A 0.5-8GHz LNA and an 8-15GHz LNA connected by the active switch used in the Ultra-Wideband (UWB) reconfigurable receiver are presented in this paper. The common drain stage and resistance negative feedback technology as well as the source degeneration inductive technology are introduced to achieve a high flat gain and fine input matching. The current-reused technique is adopted to improve the gain and the noise characteristics. The 0.5-8GHz LNA I achieves a high flat gain of 22.32-24.56 dB, a noise figure (NF) of 3.69-4.52 dB and the S11 batter than -10.78 dB across the band. The 8-15GHz LNA II achieves a high flat gain of 24.3-26.59 dB, a NF of 3.80-4.51 dB and the S11 batter than -12.56 dB in the frequency band.