Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA Nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm

Abstract

We demonstrate high performance vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 mV/dec, small DIBL of 24 mV/V, and a high ION/IOFF ratio of ~106 are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high Gm,ext of ~870 μS/μm and the best quality factor Q = Gm,ext/SSsat of 9.1 are obtained for all reported GeSn-based pFETs.