Low standby power charge trap flash memory with tunneling field effect transistor

Abstract

SONOS memory with TFET is proposed to achieve off leakage current characteristics. SONOS memory with TFET exhibits extremely small off state leakage current, good FN program efficiency. Program characteristics and disturbance characteristics were investigated with device simulation. It is expected that SONOS memory with TFET can be a promising candidate for mobile devices with require low-power consumption.