High efficiency 6-junction solar cells for the global and direct spectra

Ryan M. Francea, John F. Geisza, M. Steinera, K. Schultea, Iván Garcíab, Waldo Olavarriaa, M. Younga, Daniel J. Friedmana
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引用次数: 3

Abstract

We show 6-junction inverted metamorphic solar cells with high efficiencies under both the global and direct spectrum, and discuss improvements to device components. High voltage AlGaInP subcells are demonstrated on GaAs substrates miscut 2° towards (111)B by using Sb surfactant to reduce atomic ordering. This miscut enables high voltage and low dislocation density GaInAs subcells by using atomically-ordered GaInP-based graded buffers. One-sun efficiencies of 39.2 ± 1.3% under the global spectrum and 39.4 ± 1.1% direct spectrum have been demonstrated by using these high voltage subcell components. For high efficiency under the concentrated direct spectrum, low resistance is also necessary, which requires a challenging and nonintuitive optimization of tunnel junctions and heterobarriers. Increasing the thickness of a (Al)GaInAs spacer layer between the back surface fields (BSF) and tunnel junctions (TJ) of latticemismatched subcells reduces nonlinear resistance, which implies a detrimental interaction between the BSF and TJ. Concentrator devices with optimized spacer layers show reduced effective resistance and maintain fill factor ≫ 75% at 1100 suns. Device efficiencies under the concentrated direct spectrum peak at 47.1 ± 3.2% at 143 suns.
用于全局和直接光谱的高效6结太阳能电池
我们展示了在全局和直接光谱下都具有高效率的6结反向变质太阳能电池,并讨论了对器件组件的改进。利用Sb表面活性剂降低原子有序度,在GaAs衬底上向(111)B方向错切2°,展示了高压AlGaInP亚电池。这种错误切割通过使用基于原子有序gainp的梯度缓冲来实现高电压和低位错密度的GaInAs亚电池。使用这些高压亚电池组件,在全球光谱和直接光谱下的一次太阳效率分别为39.2±1.3%和39.4±1.1%。为了在集中的直接光谱下实现高效率,还需要低电阻,这就需要对隧道结和异质势垒进行具有挑战性和非直观的优化。增加栅格发射匹配亚电池的后表面场(BSF)和隧道结(TJ)之间的(Al)GaInAs间隔层的厚度可以降低非线性电阻,这意味着BSF和隧道结之间存在有害的相互作用。具有优化间隔层的聚光器件在1100个太阳下有效电阻降低,填充系数保持在75%。在143个太阳照射下,器件效率峰值为47.1±3.2%。
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