Synthesis of bulk crystals and thin films of the ferromagnetic MnSb

M. Jaloliddinzoda, S. Marenkin, A. Ril, M. G. Vasil’ev, A. D. Izotov, D. Korkin
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引用次数: 1

Abstract

High-temperature ferromagnets are widely used on a practical level. Based on them, magnetic memory for computers and various types of magnetic field sensors are created. Therefore, bulk ingots and thin-film samples of ferromagnet manganese antimonide (MnSb) with a high Curie point are of great interest, both from the practical and fundamental sides. Manganese antimonide films are obtained in hybrid structures using molecular-beam epitaxy. The thickness of the films does not exceed tens of nanometers. Despite their high sensitivity to magnetic fields, their small thickness prevents them from being used as magnetic field sensors. The aim of this work was to synthesise thick bulk ingots of manganese antimonide crystalsand films with a thickness of ~ 400 nm on sitall and silicon substrates. MnSb crystals were synthesised using the vacuum-ampoule method and identified using XRD, DTA, and microstructural analysis. The results of studies of bulk samples indicated the presence of an insignificant amount of antimony in additionto the MnSb phase. According to the DTA thermogram of the MnSb alloy, a small endothermic effect was observed at 572 °C, which corresponds to the melting of the eutectic on the part of antimony in the Mn-Sb system. Such composition, according to previous studies, guaranteed the production of manganese antimonide with the maximum Curie temperature. A study of the magnetic properties showed that the synthesised MnSb crystals were a soft ferromagnet with the Curie point ~ 587 K. Thin MnSb films were obtained by an original method using separate sequential deposition in a high vacuum of the Mnand Sb metals with their subsequent annealing. To optimise the process of obtaining films with stoichiometric composition, the dependences of the thickness of metal films on the parameters of the deposition process were calculated. The temperature range of annealing at which the metals interact with the formation of ferromagnetic MnSb films was established, the films were identified, and their electrical and magnetic properties were measured 
铁磁性微晶石体晶体及薄膜的合成
高温铁磁体在实际应用中有着广泛的应用。在此基础上,发明了计算机用磁存储器和各种类型的磁场传感器。因此,具有高居里点的铁磁体锑化锰(MnSb)的块状铸锭和薄膜样品,无论是从实用还是从基础方面都引起了人们极大的兴趣。采用分子束外延技术制备了杂化结构的锑化锰薄膜。薄膜的厚度不超过几十纳米。尽管它们对磁场非常敏感,但它们的小厚度使它们无法用作磁场传感器。这项工作的目的是在硅和硅衬底上合成厚的大块锑化锰晶体和厚度约为400nm的薄膜。采用真空安瓿法制备了MnSb晶体,并用XRD、DTA和显微结构分析对其进行了鉴定。大量样品的研究结果表明,除了微量锑相外,还存在少量的锑。根据MnSb合金的DTA热像图,在572℃时观察到较小的吸热效应,对应于Mn-Sb体系中锑部分共晶的熔化。根据以往的研究,这种成分保证了以最高居里温度生产锑化锰。磁性能研究表明,合成的微晶石晶体为软铁磁体,居里点为587 K。采用一种新颖的方法,将锰和锑金属在高真空中分开顺序沉积,然后进行退火,得到了薄的锰酸铋薄膜。为了优化获得具有化学计量成分的薄膜的工艺,计算了金属薄膜厚度与沉积工艺参数的关系。确定了金属相互作用形成铁磁MnSb薄膜的退火温度范围,对薄膜进行了鉴定,并测量了薄膜的电性能和磁性能
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