Characterization of sol-gel derived PZT and PLZT thin films

Abstract

Lead zirconate titanate (PZT) and lead lanthanum zirconate titanate (PLZT) precursor sols were prepared using a diol based sol-gel route. Thin films were deposited by spin coating onto PtrTi/SiO/sub 2//Si substrates. The effects of lanthanum incorporating up to 10 mol% lanthanum to the base PZT 53/47 composition, and the effects of firing temperature (500-700/spl deg/C) on crystallization, microstructure, ferroelectric and dielectric properties have been investigated. Films fired at 700/spl deg/C for 15 minutes with 0, 2 and 5 mole percent lanthanum levels had values of remanent polarization of 31, 23 and 14 /spl mu/C cm/sup -2/ (at 300 kV cm/sup -1/, 60 Hz) and corresponding relative permittivity values of 1485, 830 and 700 respectively.