SOI-based opto-mechanical Terahertz bolometer operating at room temperature with microsecond response time

K. Froberger, M. Faucher, B. Walter, M. Lavancier, R. Peretti, J. Lampin, G. Ducournau, S. Barbieri
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Abstract

We report the operation of a Terahertz (THz) detector exploiting the bi-material effect to resonantly excite a cantilever (CL) of micrometric size. The detector is fabricated on a SOI substrate and coupling to the incident THz radiation is obtained using two coupled aluminum half-dipole antennas. The induced CL deflection is readout optically with a 1.5µm laser. At 300K and 2.5THz, we obtain a peak responsivity of ~2 x 108pm/W for the fundamental bending mode. This yields a NEP of ~20nW/Hz1/2 at 2.5THz, i.e. of ~2nW/Hz1/2 at 3.8THz, corresponding to the antenna peak absorption. Finally, the low mechanical quality factor of the mode grants a broad frequency response of approximately 100kHz, i.e. a response time of ~10 μs.
基于soi的光机械太赫兹辐射热计,在室温下工作,响应时间为微秒
我们报道了一个太赫兹(THz)探测器的操作,利用双材料效应共振激发微米尺寸的悬臂(CL)。该探测器是在SOI衬底上制作的,并通过两个耦合铝半偶极子天线与入射太赫兹辐射进行耦合。通过1.5µm激光读出感应CL偏转。在300K和2.5THz下,我们获得了基本弯曲模式的峰值响应率~2 × 108pm/W。在2.5THz时NEP为~20nW/Hz1/2,即在3.8THz时NEP为~2nW/Hz1/2,对应于天线的峰值吸收。最后,该模式的低机械质量因子赋予了大约100kHz的宽频率响应,即响应时间为~10 μs。
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