Switching and reliability mechanisms for ReRAM

Abstract

Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and outlier bits. Degradation of resistance of typical bits is due to the oxygen vacancy profile in the filament changing during oxygen diffusion, and the retention failure of outlier bits is caused by the critical percolation path being broken within the filament during oxygen diffusion.