Fundamental characterization of stochastic variation for improved single-expose extreme ultraviolet patterning at aggressive pitch

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jennifer Church, Luciana Meli, Jing Guo, M. Burkhardt, C. Mack, A. de Silva, K. Petrillo, M. Breton, R. Bonam, R. Lallement, E. Miller, B. Austin, S. Matham, N. Felix
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引用次数: 5

Abstract

Abstract. Background: With aggressive scaling of single-expose (SE) extreme ultraviolet (EUV) lithography to the sub-7-nm node, stochastic variations play a prominent role in defining the lithographic process window (PW). Fluctuations in photon shot noise, absorption, and subsequent chemical reactions can lead to stochastic failure, directly impacting electrical yield. Aim: Fundamental characterization of the mode and magnitude of these variations is required to define the threshold for failure. Approach: A complementary series of techniques is enlisted to probe the nature and modulation of stochastic variation in SE EUV patterning. Unbiased line edge roughness (LER), local critical dimension uniformity (LCDU), and defect inspection techniques are employed to monitor the frequency of stochastic variations leading to failures in line/space (L/S) and via patterning. Results: When characterizing different resists and illumination conditions, there is no change in unbiased LER or via LCDU with increasing critical dimension (CD). Stochastic defect density is correlated with CD for both L/S and via arrays, and there is a strong correlation with L/S electrical yield data. Conclusions: Traditional 3σ LER and via LCDU measurements are not sensitive enough to define and improve PW. For PW centering and yield improvement, stochastic defect inspection is a necessity.
侵略性俯仰下改进的单次暴露极紫外图案随机变化的基本特征
摘要背景:随着单曝光(SE)极紫外(EUV)光刻技术向亚7nm节点的大规模扩展,随机变化在定义光刻工艺窗口(PW)方面发挥了重要作用。光子噪声、吸收和随后的化学反应的波动可导致随机失效,直接影响发电量。目的:需要对这些变化的模式和幅度进行基本描述,以确定失效的阈值。方法:利用一系列互补的技术来探索SE - EUV模式随机变化的性质和调制。采用无偏线边缘粗糙度(LER)、局部临界尺寸均匀性(LCDU)和缺陷检测技术来监测导致线/空间(L/S)和通过图案的随机变化的频率。结果:在表征不同的电阻和光照条件时,随着临界尺寸(CD)的增加,无偏LER和通过LCDU没有变化。对于L/S和通孔阵列,随机缺陷密度与CD相关,并且与L/S电产率数据有很强的相关性。结论:传统的3σ LER和通过LCDU测量对PW的定义和改善不够敏感。为了提高PW定心和良率,随机缺陷检测是必要的。
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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