Visible electroluminescence from MOS capacitors with Si-implanted SiO/sub 2/ under dynamic operation

Abstract

Electroluminescence (EL) under alternating-current (ac) operation is first reported for n/sup +/-polysilicon/SiO/sub 2//p-Si MOS capacitors with 50 nm Si-implanted SiO/sub 2/. Visible EL can be observed with the naked eye in the dark. The ac operation by pulse-wave distinctly enhances the EL intensity and its lifetime. The pulse frequency affects the EL spectrum and thus the EL color. A model of EL mechanism is proposed for the Si-implanted MOS EL device, which has a possibility of blue and UV light emission.