Investigation of 2D-lattice distributed reflector lasers

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-12-01 DOI:10.1109/LEOS.2001.969281

L. J. Sargent, A. Massara, M. Gioannini, J. Yong, P. Heard, R. Penty, I. White

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Abstract

A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.

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二维晶格分布反射激光器的研究

对InGaAsP-InP二维晶格MQW激光器进行了详细的研究。光场强度随器件腔体距离的变化特性表明，蚀刻显著地改变了波导的光学特性。耦合系数较高，K/sub g/ >250cm/sup -1/。建模表明，这个高值与蚀刻器件中即使在10gb /s的大信号调制下也能保持的无模跳单模发射一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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