A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals

Hung-Bin Chen, Shih-Han Lin, Jia-Jiun Wu, Yung-Chun Wu, Chun-Yen Chang
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Abstract

A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals have been successfully demonstrated. The process is simple and mask free. For the 3-nm-thick channel devices, the S.S. of 88 mV/dec and Ion/Ioff ratio of more than 108 can be achieved. Extreme low applied voltage for band-to-band-tunneling-induced hot electron injection tunneling (BBHE) operation and excellent retention are proposed.
一种新型的门全能超薄p沟道多晶硅TFT,具有硅纳米晶体晶体管和快闪存储器的功能
成功地展示了一种新型的门全能超薄p沟道多晶硅TFT,它具有硅纳米晶体晶体管和快闪存储器的功能。这个过程很简单,不需要面膜。对于3 nm厚的通道器件,可以实现88 mV/dec的S.S.和大于108的离子/ off比。提出了一种极低的带对带隧道诱导热电子注入隧道(BBHE)运行电压和优异的保持性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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