Unijunction Transistor on Silicon-On-Insulator Substrate

Abstract

A unijunction transistor based on fully-depleted silicon-on-insulator substrate is proposed. The device structure is similar to a junction field effect transistor. By conducting the TCAD simulation, we observe sharp switching and large hysteresis in emitter current-emitter voltage curves with the turn-on voltage linearly controlled by the second base voltage. The operation of the device is mainly determined by the emitter-channel PN junction, which is induced by the backgate voltage. The impact of the backgate voltage on the electrical characteristics is analyzed by changes in the channel potential.