Contact Interface Characterization of Graphene contacted MoS2 FETs

V. Mootheri, A. Minj, G. Arutchelvan, A. Leonhardt, I. Asselberghs, M. Heyns, I. Radu, D. Lin
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Abstract

Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to characterize the MoS2-contact interface by inverting the MoS2 devices, exposing the contact interface. Using Raman spectroscopy and X-ray photoelectron spectroscopy, we characterize the contact interface to correlate the observed electrical trend with physical characterization of the contact interface.
石墨烯接触MoS2 fet的接触界面表征
基于石墨烯的二维电触点已被提出,以缓解基于二维材料的晶体管的接触电阻瓶颈。在这项工作中,我们详细分析了2.1nm厚CVD MoS2的ru -石墨烯和ni -石墨烯接触,其接触电阻分别为9.34 kΩ - μm和17.1 kΩ - μm。我们报告了一种新的物理表征策略,通过反转MoS2器件,暴露接触界面来表征MoS2接触界面。利用拉曼光谱和x射线光电子能谱对接触界面进行表征,将观察到的电趋势与接触界面的物理特征联系起来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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