A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic

Abstract

In this work, a novel MIS-gated hybrid anode diode (MG-HAD) based on ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is demonstrated to exhibit a superior reverse blocking characteristic. An ultra-low reverse leakage of ~1.1 × 10−7 A/mm observed in room-temperature (RT) and the breakdown voltage (BV) dominated by buffer breakdown, verify the excellent reverse blocking characteristic originated from the ALD-Ah03 insulator in MIS-gate structure. More importantly, the reverse leakage current maintains respectably low at high temperature (HT) up to 200 °C, which is as low as ~5.1 × 10−7 A/mm at 200 °C and is among the best reported results at the comparable reverse bias voltage and temperature.. Such a great superiority in HT reverse blocking capability indicates that the UTB MG-HAD is a promising device structure and technology for high performance GaN power diodes.