All-wet Cu-filled TSV process using electroless Co-alloy barrier and Cu seed

F. Inoue, T. Shimizu, H. Miyake, R. Arima, S. Shingubara
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引用次数: 2

Abstract

We demonstrated fabrication of Cu-TSV using all-wet process, which has a high potential to apply for the via-last Cu-TSV process. A Co-W alloy diffusion barrier layer was formed on SiO2 layer by electroless plating at 60 °C with Pd nanoparticle catalyst. The barrier layer was thin and continuous throughout a 2 φ × 24 μm TSV and its adhesion strength on SiO2 was as high as that of PVD-Ta. The Co-W alloy layer has undergone an interdiffusion test, which showed a high resistance against Cu diffusion into SiO2 layer. Then, seed layer was formed by electroless Cu deposition on the Co-W alloy layer through displacement reaction. These results reveal a feasibility of all-wet fabrication in a high aspect ratio TSV process.
采用化学钴合金屏障和Cu种子的全湿式TSV充铜工艺
我们演示了采用全湿工艺制备Cu-TSV的方法,该方法具有很高的应用于过末Cu-TSV工艺的潜力。采用纳米钯催化剂在60℃下化学镀,在SiO2表面形成Co-W合金扩散阻挡层。在2 φ × 24 μm的TSV中,阻挡层薄且连续,其与SiO2的结合强度与PVD-Ta相当。对Co-W合金层进行了互扩散试验,结果表明Co-W合金层具有较高的抗Cu向SiO2层扩散的能力。然后通过位移反应在Co-W合金层上化学沉积Cu,形成种子层。这些结果揭示了在高纵横比TSV工艺中全湿法制备的可行性。
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