{"title":"Broadband Photodetection of Cd3As2: Review and Perspectives","authors":"Yunkun Yang , Faxian Xiu","doi":"10.1016/j.mtelec.2022.100007","DOIUrl":null,"url":null,"abstract":"<div><p>Due to the topologically protected gapless electronic structure, Cadmium arsenide (Cd<sub>3</sub>As<sub>2</sub>) is predicted to possess large and high-speed photoresponses in a broad spectrum. The progressively developed device process and material technologies offer the possibility to integrate semimetals with semiconductors or 2D materials into heterojunctions, which can suppress the intrinsically high dark current. Hence, photodetectors based on Cd<sub>3</sub>As<sub>2</sub> and its heterostructures has been gradually evolved in recent years, showing an excellent broadband photodetection capability. In this Perspective, we elaborate on several key parameters for evaluating the performance of a photodetection. We overview recent studies on photodetection and imaging based on Cd<sub>3</sub>As<sub>2</sub> nanostructures or thin films, and further discuss the opportunities and challenges for Cd<sub>3</sub>As<sub>2</sub> photodetectors.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000079/pdfft?md5=645397216c11d0c76912a5d76ef5bdd9&pid=1-s2.0-S2772949422000079-main.pdf","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Electronics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772949422000079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Due to the topologically protected gapless electronic structure, Cadmium arsenide (Cd3As2) is predicted to possess large and high-speed photoresponses in a broad spectrum. The progressively developed device process and material technologies offer the possibility to integrate semimetals with semiconductors or 2D materials into heterojunctions, which can suppress the intrinsically high dark current. Hence, photodetectors based on Cd3As2 and its heterostructures has been gradually evolved in recent years, showing an excellent broadband photodetection capability. In this Perspective, we elaborate on several key parameters for evaluating the performance of a photodetection. We overview recent studies on photodetection and imaging based on Cd3As2 nanostructures or thin films, and further discuss the opportunities and challenges for Cd3As2 photodetectors.
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