{"title":"Optimization of CdS-free non-toxic electron transport layer for Sb2S3-based solar cell with notable enhanced performance","authors":"Sameen Maqsood, Zohaib Ali, Khuram Ali, Rimsha Bashir Awan, Yusra Arooj, Ayesha Younus","doi":"10.1007/s10825-023-02106-9","DOIUrl":null,"url":null,"abstract":"<div><p>In this investigation, we develop CdS-free non-toxic thin-film solar cell structure with antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>) as an absorber material. Sb<sub>2</sub>S<sub>3</sub> has found to be a promising candidate for production of renewable energy. Solar cells based on Sb<sub>2</sub>S<sub>3</sub> have been attracted worldwide attraction due to their outstanding efficiency and low cost. To serve as an optimistic buffer layer, 3C-SiC (cubic silicon carbide) is used thanks to its suitable bandgap to replace toxic cadmium sulfide (CdS). SCAPS-1D (one-dimensional solar cell capacitance simulator) software has been employed to numerically investigate the performance of Sb<sub>2</sub>S<sub>3</sub>-based n-ZnO/n-3C-SiC/p-Sb<sub>2</sub>S<sub>3</sub> heterostructure solar cells. The influence of absorber/buffer layer thickness, acceptor/donor densities, and defect density on device working have been investigated. Consequently, the role of defects in p-Sb<sub>2</sub>S<sub>3</sub> along with the significance of n-3C-SiC/p-Sb<sub>2</sub>S<sub>3</sub> interface defects has been studied to provide recommendations for achieving high efficiency. The proposed structure provides the enhanced efficiency of 17% under 1.5 G illumination spectrum. The parameters regarding solar cell performance such as <i>V</i><sub>oc</sub>, <i>J</i><sub>sc</sub>, FF, QE and η have been studied graphically. This novel structure may have considerable influence on progress of improved photovoltaic devices in future.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-023-02106-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this investigation, we develop CdS-free non-toxic thin-film solar cell structure with antimony sulfide (Sb2S3) as an absorber material. Sb2S3 has found to be a promising candidate for production of renewable energy. Solar cells based on Sb2S3 have been attracted worldwide attraction due to their outstanding efficiency and low cost. To serve as an optimistic buffer layer, 3C-SiC (cubic silicon carbide) is used thanks to its suitable bandgap to replace toxic cadmium sulfide (CdS). SCAPS-1D (one-dimensional solar cell capacitance simulator) software has been employed to numerically investigate the performance of Sb2S3-based n-ZnO/n-3C-SiC/p-Sb2S3 heterostructure solar cells. The influence of absorber/buffer layer thickness, acceptor/donor densities, and defect density on device working have been investigated. Consequently, the role of defects in p-Sb2S3 along with the significance of n-3C-SiC/p-Sb2S3 interface defects has been studied to provide recommendations for achieving high efficiency. The proposed structure provides the enhanced efficiency of 17% under 1.5 G illumination spectrum. The parameters regarding solar cell performance such as Voc, Jsc, FF, QE and η have been studied graphically. This novel structure may have considerable influence on progress of improved photovoltaic devices in future.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.