InP-Based Tunnel Junctions for Microconcentrator Photovoltaics

IF 2.5 3区工程技术 Q3 ENERGY & FUELS

IEEE Journal of Photovoltaics Pub Date : 2023-09-11 DOI:10.1109/JPHOTOV.2023.3309916

Kenneth J. Schmieder;Thomas C. Mood;Eric A. Armour;Mitchell F. Bennett;Margaret A. Stevens;Martin Diaz;Ziggy Pulwin;Matthew P. Lumb

引用次数: 0

Abstract

To further improve the performance of mechanically stacked microconcentrator photovoltaic devices, we have studied high-transparency tunnel junctions for inclusion in triple junction solar cells that are fully lattice-matched to InP. These tunnel junctions are evaluated using both standalone tunnel diodes as well as full multijunction solar cells. Of particular focus herein is the p-type tunnel junction layer, which has proven challenging to integrate in multijunction solar cells with high electrical activity, a wide enough bandgap for transparency, and an abrupt doping profile. Studies include the effect of polarity, tunnel diode dopant/composition, application of a nitrogen anneal, tunnel diode growth temperature, and cladding material. Resulting InP-based triple junction devices achieved up to 370 suns-equivalent tunneling capability, which satisfies the requirements for microconcentrator photovoltaic applications in the space environment.

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用于微型聚光灯光伏的InP基隧道结

为了进一步提高机械堆叠的微集中器光伏器件的性能，我们研究了高透明度隧道结，用于与InP完全晶格匹配的三结太阳能电池。这些隧道结使用独立的隧道二极管和全多结太阳能电池进行评估。本文特别关注的是p型隧道结层，它已被证明在具有高电活性、足够宽的带隙用于透明和突然掺杂分布的多结太阳能电池中集成具有挑战性。研究包括极性的影响、隧道二极管掺杂剂/成分、氮退火的应用、隧道二极管生长温度和包层材料。由此产生的基于InP的三结器件实现了高达370sun的等效隧穿能力，满足了空间环境中微型聚光灯光伏应用的要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Photovoltaics ENERGY & FUELS-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

7.00

自引率

10.00%

发文量

206

期刊介绍： The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.