{"title":"Exploring Optical and Electronic Properties of 2D Lead-Free Hybrid Perovskites Based on Sn-Ge for Photovoltaic Applications","authors":"Tahmineh Khademi;Tayebeh Movlarooy","doi":"10.1109/JPHOTOV.2023.3307815","DOIUrl":null,"url":null,"abstract":"2D perovskites have recently become a promising substitute for 3D structures. In 2D lead-free perovskites, unique optical and electronic properties for photoelectronic and photovoltaic applications have been observed due to the quantum confinement effect. In this study, density functional theory calculations were used to examine both the electrical and optical characteristics of lead-free, 2D compounds of (PEA)\n<sub>2</sub>\nMI\n<sub>4</sub>\n (PEA = C\n<sub>6</sub>\nH\n<sub>5</sub>\nC\n<sub>2</sub>\nH\n<sub>4</sub>\nNH\n<sub>3</sub>\n<sup>+</sup>\n, M = Ge, Sn, Sn\n<sub>0.5</sub>\nGe\n<sub>0.5</sub>\n). The results of our research have shown that (PEA)\n<sub>2</sub>\nGeI\n<sub>4</sub>\n, (PEA)\n<sub>2</sub>\nSnI\n<sub>4</sub>\n, and (PEA)\n<sub>2</sub>\nSn\n<sub>0.5</sub>\nGe\n<sub>0.5</sub>\nI\n<sub>4</sub>\n have a direct bandgap of about 1.0 eV, 1.2 eV, and 1.4 eV, respectively. By adding Sn to structure (PEA)\n<sub>2</sub>\nGeI\n<sub>4</sub>\n, it was possible to notice a redshift of the absorption edge and band gap shrinking in the visible light range, which demonstrates the special optical characteristics of structure (PEA)\n<sub>2</sub>\nSn\n<sub>0.5</sub>\nGe\n<sub>0.5</sub>\nI\n<sub>4</sub>\n for photovoltaic applications. It is revealed that (PEA)\n<sub>2</sub>\nSn\n<sub>0.5</sub>\nGe\n<sub>0.5</sub>\nI\n<sub>4</sub>\n compound has a suitable bandgap and high optical absorption and conductivity in the visible region. In addition, low reflectivity, high absorption, high conductivity, and high dielectric constant imply that these materials have a high potential for use in photovoltaic and optoelectronic devices, including optical detectors, LED, solar cells, etc.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"873-881"},"PeriodicalIF":2.5000,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10246841/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
2D perovskites have recently become a promising substitute for 3D structures. In 2D lead-free perovskites, unique optical and electronic properties for photoelectronic and photovoltaic applications have been observed due to the quantum confinement effect. In this study, density functional theory calculations were used to examine both the electrical and optical characteristics of lead-free, 2D compounds of (PEA)
2
MI
4
(PEA = C
6
H
5
C
2
H
4
NH
3+
, M = Ge, Sn, Sn
0.5
Ge
0.5
). The results of our research have shown that (PEA)
2
GeI
4
, (PEA)
2
SnI
4
, and (PEA)
2
Sn
0.5
Ge
0.5
I
4
have a direct bandgap of about 1.0 eV, 1.2 eV, and 1.4 eV, respectively. By adding Sn to structure (PEA)
2
GeI
4
, it was possible to notice a redshift of the absorption edge and band gap shrinking in the visible light range, which demonstrates the special optical characteristics of structure (PEA)
2
Sn
0.5
Ge
0.5
I
4
for photovoltaic applications. It is revealed that (PEA)
2
Sn
0.5
Ge
0.5
I
4
compound has a suitable bandgap and high optical absorption and conductivity in the visible region. In addition, low reflectivity, high absorption, high conductivity, and high dielectric constant imply that these materials have a high potential for use in photovoltaic and optoelectronic devices, including optical detectors, LED, solar cells, etc.
期刊介绍:
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.