Low Temperature PureB Technology for CMOS Compatible Photodetectors

Abstract

In this thesis, conventional high temperature (HT, 700 °C) PureB technology is optimized in order to fabricate detectors with improved key parameters such as the spatial uniformity of the responsivity. A novel technology for low temperature (LT, 400 °C) boron deposition is developed providing a uniform, smooth, closed LT boron layer. This technology is successfully employed to create near-ideal LT PureB (pure boron) diodes with low, deep-junction-like saturation currents which make it possible to fully integrate LT PureB photodiodes together with electronic interface circuits and other sensors on a single chip. In this way, smart sensor systems or even CCD or CMOS UV imagers can be realized.