High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

Abstract

In the case of CVD of graphene using a copper foil substrate, surface cleaning technique of copper foil before CVD is especially important. Also in the case of plasma-assisted CVD (plasma CVD), it is necessary to prevent contamination such as impurities released from the reaction chamber by plasma exposure, particularly silicon, which originate from the quartz of antenna units for exciting plasma.