Synthesis of Novel Nitride Semiconductors and Hard Materials Using High-Pressure Metathesis Reaction

Abstract

KAWAMURA 遊佐 斉 Hitoshi YUSA High-pressure metathesis reaction is a promising method for synthesizing novel nitride compounds, e.g. multi-component semiconductors and hard materials. The strong nitridation ability under high pressure makes it possi-ble to realize such compounds. In this article, we introduce our attempts to synthesize 5d nitrides ( ReN 2 , WN and W 2.25 N 3 ) and ternary nitride semiconductors ( ZnSnN 2 and MgSnN 2 ) using the metathesis reaction. This method contributes not only to improvement of crystallinity but also to the synthesis of metastable phases. The high-pressure metathesis reaction may open a way for realizing materials designed