High-temperature oxidation behaviour of si3n4 nanowires with different diameters

IF 0.9 4区材料科学 Q3 MATERIALS SCIENCE, CERAMICS

Processing and Application of Ceramics Pub Date : 2023-01-01 DOI:10.2298/pac2301039z

Shuang Zhao, Feiyue Yang, Jun Chen, Kunfeng Li, Zhifang Fei, Zichun Yang

引用次数: 0

Abstract

?-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significantly oxidized when the temperature was lower than 900?C. However, the Si3N4-W1 microstructure began to change significantly after oxidation at 1200?C, while the Si3N4-W2 microstructure remained almost unchanged. Moreover, the Si3N4- W1 and Si3N4-W2 nanowires oxidized significantly after treatment at 1400?C, with weight gain of 26.4% and 13.7%, respectively.

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不同直径si3n4纳米线的高温氧化行为

采用改进的化学气相沉积(CVD)方法合成了直径为100 ~ 180 nm (Si3N4-W1)和420 ~ 510 nm (Si3N4-W2)的-Si3N4纳米线，并研究了其高温氧化后的微观结构变化。结果表明，当温度低于900℃时，两种Si3N4纳米线均未发生明显氧化。而Si3N4-W1组织在1200℃氧化后开始发生明显变化。而Si3N4-W2的显微组织基本保持不变。此外，Si3N4- W1和Si3N4- w2纳米线在1400?C，体重分别增加26.4%和13.7%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Processing and Application of Ceramics MATERIALS SCIENCE, CERAMICS-

CiteScore

1.90

自引率

9.10%

发文量

审稿时长

10 weeks

期刊介绍： Information not localized