{"title":"Toward Efficient Logic-in-Memory Computing With Magnetic Reconfigurable Logic Circuits","authors":"Farzad Razi;Mohammad Hossein Moaiyeri;Siamak Mohammadi","doi":"10.1109/LMAG.2022.3146060","DOIUrl":null,"url":null,"abstract":"Logic-in-memory (LIM) structures are promising candidates to obviate limitations of the conventional von Neumann architecture, especially in big data applications, such as image processing. In this paradigm, simple logic operations are embedded in memory to perform basic processes and consequently decrease the workload of the main processor. This letter presents an efficient hybrid fin field-effect transistor and magnetic tunnel junction (MTJ) logic structure compatible with all kinds of memory and which performs \n<sc>nor/or</small>\n and \n<sc>nand/and</small>\n operations. The design utilizes MTJs to obtain different voltage levels and two sense amplifiers to generate the outputs. Simulation results assert that the design improves the delay and power by 33% and 20%, respectively, compared to its state-of-the-art counterparts. Moreover, the magnetic LIM structure is appropriately utilized in image processing applications, such as minimum and maximum image filters, for preparing intermediate data. In the case study, high-level simulations indicate that the design reduces the delay and power by 31% and 21%, respectively.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"13 ","pages":"1-5"},"PeriodicalIF":1.1000,"publicationDate":"2022-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/9695241/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 4
Abstract
Logic-in-memory (LIM) structures are promising candidates to obviate limitations of the conventional von Neumann architecture, especially in big data applications, such as image processing. In this paradigm, simple logic operations are embedded in memory to perform basic processes and consequently decrease the workload of the main processor. This letter presents an efficient hybrid fin field-effect transistor and magnetic tunnel junction (MTJ) logic structure compatible with all kinds of memory and which performs
nor/or
and
nand/and
operations. The design utilizes MTJs to obtain different voltage levels and two sense amplifiers to generate the outputs. Simulation results assert that the design improves the delay and power by 33% and 20%, respectively, compared to its state-of-the-art counterparts. Moreover, the magnetic LIM structure is appropriately utilized in image processing applications, such as minimum and maximum image filters, for preparing intermediate data. In the case study, high-level simulations indicate that the design reduces the delay and power by 31% and 21%, respectively.
期刊介绍:
IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest.
IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.