Novel Radiation Hardened Magnetic Full Adder Using Spin-Orbit Torque for Multinode Upset

IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Alok Kumar Shukla;Arshid Nisar;Seema Dhull;Brajesh Kumar Kaushik
{"title":"Novel Radiation Hardened Magnetic Full Adder Using Spin-Orbit Torque for Multinode Upset","authors":"Alok Kumar Shukla;Arshid Nisar;Seema Dhull;Brajesh Kumar Kaushik","doi":"10.1109/LMAG.2022.3178627","DOIUrl":null,"url":null,"abstract":"Spintronic-based integrated circuits have been extensively explored as viable contenders for space use since magnetic tunnel junctions (MTJs) are intrinsically immune to radiation effects. On the other hand, their complementary metal–oxide semiconductor (CMOS) peripheral circuitry is still susceptible to radiation-induced single-event upset (SEU) and multinode upset (MNU) caused by charge sharing. It results in localized ionization and flips the data state of memory cells or other logic circuits. To ensure a fault-free operation, this letter proposes a novel radiation-hardened (RH) CMOS peripheral circuitry for a magnetic full adder (MFA) using spin-orbit torque MTJs. The circuit can recover from SEUs as well as MNUs regardless of the accumulated charge. Moreover, the read time and read energy of the circuit are improved by 17.6% and 64%, respectively, when compared to the previously reported RH MFA.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"13 ","pages":"1-5"},"PeriodicalIF":1.1000,"publicationDate":"2022-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/9784894/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 3

Abstract

Spintronic-based integrated circuits have been extensively explored as viable contenders for space use since magnetic tunnel junctions (MTJs) are intrinsically immune to radiation effects. On the other hand, their complementary metal–oxide semiconductor (CMOS) peripheral circuitry is still susceptible to radiation-induced single-event upset (SEU) and multinode upset (MNU) caused by charge sharing. It results in localized ionization and flips the data state of memory cells or other logic circuits. To ensure a fault-free operation, this letter proposes a novel radiation-hardened (RH) CMOS peripheral circuitry for a magnetic full adder (MFA) using spin-orbit torque MTJs. The circuit can recover from SEUs as well as MNUs regardless of the accumulated charge. Moreover, the read time and read energy of the circuit are improved by 17.6% and 64%, respectively, when compared to the previously reported RH MFA.
用于多节点镦粗的新型辐射硬化自旋轨道力矩磁性全加器
基于自旋电子的集成电路已被广泛探索为太空使用的可行竞争者,因为磁性隧道结(MTJ)本质上对辐射效应免疫。另一方面,它们的互补金属氧化物半导体(CMOS)外围电路仍然容易受到电荷共享引起的辐射诱导的单事件扰乱(SEU)和多节点扰乱(MNU)的影响。它导致局部电离,并翻转存储单元或其他逻辑电路的数据状态。为了确保无故障操作,本文提出了一种新的辐射硬化(RH)CMOS外围电路,用于使用自旋轨道转矩MTJs的磁性全加器(MFA)。电路可以从SEU以及MNU中恢复,而与累积的电荷无关。此外,与先前报道的RH MFA相比,电路的读取时间和读取能量分别提高了17.6%和64%。
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来源期刊
IEEE Magnetics Letters
IEEE Magnetics Letters PHYSICS, APPLIED-
CiteScore
2.40
自引率
0.00%
发文量
37
期刊介绍: IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest. IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.
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