Effect of Ru targets on the growth and electrical properties of sputtering Ru films

IF 1.7 4区 化学 Q4 CHEMISTRY, PHYSICAL
Yue Shen, Yanting Xu, Jun Gan, Renyao Zhang, M. Wen
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引用次数: 0

Abstract

Ruthenium (Ru) targets prepared by vacuum hot pressing of Ru powder with different morphologies. Then Ru films were deposited on SiO2/Si(100) substrate for different times by RF magnetron sputtering. The relationship in terms of the microstructure and electrical properties between Ru targets and resultant films at different conditions were studied by means of FESEM, XRD, AFM, four probe and so on. The results showed that parameters of Ru films, such as the average deposition rate, surface roughness, crystallization properties and the growth rate were directly related to the homogeneity of the microstructure of the Ru targets, but there was no correlation between the crystal orientations of the films and the targets. Moreover, the resistivity of Ru films was positively correlated with that of Ru targets.
钌靶对溅射钌薄膜生长和电性能的影响
采用真空热压法制备不同形貌的钌靶材。然后采用射频磁控溅射法在SiO2/Si(100)衬底上沉积不同时间的Ru薄膜。采用FESEM、XRD、AFM、四探针等手段研究了不同条件下Ru靶材与薄膜的微观结构和电学性能的关系。结果表明,Ru薄膜的平均沉积速率、表面粗糙度、结晶性能和生长速率等参数与Ru靶材微观结构的均匀性有直接关系,而薄膜的晶体取向与靶材没有相关性。钌薄膜的电阻率与钌靶材的电阻率呈正相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Johnson Matthey Technology Review
Johnson Matthey Technology Review CHEMISTRY, PHYSICAL-
CiteScore
4.30
自引率
4.30%
发文量
48
审稿时长
12 weeks
期刊介绍: Johnson Matthey Technology Review publishes articles, reviews and short reports on science enabling cleaner air, good health and efficient use of natural resources. Areas of application and fundamental science will be considered in the fields of:Advanced materials[...]Catalysis[...][...]Characterisation[...]Electrochemistry[...]Emissions control[...]Fine and speciality chemicals[...]Historical[...]Industrial processes[...]Materials and metallurgy[...]Modelling[...]PGM and specialist metallurgy[...]Pharmaceutical and medical science[...]Surface chemistry and coatings[...]Sustainable technologies.
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