Study of femtosecond nonlinear optical coefficients for Bi doped Se85-xTe15Bix chalcogenide thin films

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
P. Yadav, C. Tyagi, A. Devi, N. Gahlot
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引用次数: 0

Abstract

The present work reports the influence of selenium replacement by bismuth on the nonlinear optical parameters of ternary Se85-xTe15Bix (x=0, 1, 2, 3, 4, 5 atomic %) chalcogenide thin films. Calculation of nonlinear refractive index (n2), two-photon absorption coefficient (β2) and third-order susceptibility (χ (3)) by well known Z-scan technique with femtosecond laser pulses were done. The Z-scan spectra for Se85-xTe15Bix upto Bi= 4 atomic % results in self- focusing behavior of n2 is positive while for Bi=5 atomic % n2 is negative. The behavior of n2 by using different physical parameters are exlpained. The comparison of experimental and theoretical values of n2 with pure silica are also studied. The presence of the valley at focus in open aperture Z-scan graph demonstrates strong reverse saturable absorption. The figure of merit (FOM) for the SeTe-Bi chalcogenide thin films is found to be less than 1 and are beneficial for all-optical switch devices.
掺铋Se85-xTe15Bix硫系薄膜飞秒非线性光学系数研究
本文报道了铋取代硒对三元Se85-xTe15Bix (x= 0,1,2,3,4,5原子%)硫系薄膜非线性光学参数的影响。利用飞秒激光脉冲的z扫描技术计算非线性折射率(n2)、双光子吸收系数(β2)和三阶磁化率(χ(3))。Se85-xTe15Bix在Bi= 4原子%以下的z扫描光谱表明,n2的自聚焦行为为正,而在Bi=5原子%以下的自聚焦行为为负。用不同的物理参数解释了n2的行为。研究了n2与纯二氧化硅的实验值和理论值的比较。在开孔z扫描图中,焦点处的谷的存在表明了强的反向饱和吸收。发现SeTe-Bi硫系薄膜的优点系数小于1,有利于全光开关器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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