The Electronic Band Structure Evaluation of OLED Materials by Combination of LEIPS and UPS

M. Terashima, Takuya Miayayama, T. Shirao, H. Mo, Yasuhiro Hatae, H. Fujimoto, Katsumi Watanabe
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引用次数: 1

Abstract

The electron affinity and ionization potential of OLED materials were evaluated using low energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS), which can be incorporated into a multi-technique X-ray Photoelectron Spectroscopy (XPS) system. The energy level of lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) were estimated by LEIPS and UPS for three kinds of samples, i.e. CuPc (Cu phthalocyanine) thin film (10 nm) / ITO (indium tin oxide) film / glass substrate, C 60 thin film (10 nm) / Au film / ITO film / glass substrate, and α-NPD (Bis[N-(1-naphthyl)-N-phenyl]benzidine) thin film (10 nm) / ITO film / glass substrate, respectively. The band gap at the surface of the materials were determined by these levels. In addition, by utilizing Ar-gas cluster ion beam (Ar-GCIB), in-situ LEIPS and UPS depth profiling of interface of the multilayer
结合LEIPS和UPS评价OLED材料的电子能带结构
利用低能逆光电子能谱(LEIPS)和紫外光电子能谱(UPS)对OLED材料的电子亲和和电离势进行了评价,并将其纳入多技术x射线光电子能谱(XPS)系统中。利用LEIPS和UPS分别对CuPc(酞菁铜)薄膜(10 nm) / ITO(氧化铟锡)薄膜/玻璃衬底、c60薄膜(10 nm) / Au薄膜/ ITO薄膜/玻璃衬底和α-NPD(双[N-(1-萘基)-N-苯基]联苯胺)薄膜(10 nm) / ITO薄膜/玻璃衬底三种样品的最低未占据分子轨道(LUMO)和最高已占据分子轨道(HOMO)的能级进行了估算。材料表面的带隙由这些能级决定。此外,利用ar -气簇离子束(Ar-GCIB)、原位LEIPS和UPS对多层界面进行深度剖面分析
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