Analytical Model of Random Variation in Drain Current of FGMOSFET

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2015-07-15 DOI:10.1155/2015/315105

R. Banchuin

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引用次数: 4

Abstract

The analytical model of random variation in drain current of the Floating Gate MOSFET (FGMOSFET) has been proposed in this research. The model is composed of two parts for triode and saturation region of operation where the process induced device level random variations of each region and their statistical correlations have been taken into account. The nonlinearity of floating gate voltage and dependency on drain voltage of the coupling factors of FGMOSFET have also been considered. The model has been found to be very accurate since it can accurately fit the SPICE BSIM3v3 based reference obtained by using Monte-Carlo SPICE simulation and FGMOSFET simulation technique with SPICE. It can fit the BSIM4 based reference if desired by using the optimally extracted parameters. By using the proposed model, the variability analysis of FGMOSFET and the analytical modeling of the variation in the circuit level parameter of any FGMOSFET based circuit can be performed. So, this model has been found to be an efficient tool for the variability aware analysis and design of FGMOSFET based circuit.

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FGMOSFET漏极电流随机变化的解析模型

本研究提出了浮栅MOSFET漏极电流随机变化的解析模型。该模型由三极管和饱和工作区两部分组成，其中考虑了工艺引起的各区域器件电平随机变化及其统计相关性。同时还考虑了浮栅电压的非线性和耦合因素对漏极电压的依赖性。通过蒙特卡罗SPICE仿真和FGMOSFET仿真技术得到的基于SPICE BSIM3v3的参考值，该模型可以准确地拟合，具有很高的精度。如果需要，它可以通过使用最优提取的参数拟合基于BSIM4的参考。利用所提出的模型，可以进行FGMOSFET的变异性分析和任何基于FGMOSFET的电路电平参数变化的分析建模。因此，该模型已被发现是一个有效的工具，可变性感知分析和设计基于fmosfet的电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.