On the Mott-Hubbard Band in La2CuO4

M. Kataoka, M. Ikebe
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引用次数: 0

Abstract

The Mott-Hubbard (MH) band in the charge-transfer type insulator LazCuO. is inves· tigated theoretically. The two cases in each of which either 3dx'-y' or 3daz'-r' orbit on the Cu site (with the z axis perpendicular to the CuOz plane) forms the MH-band are examined by applying Hubbard's approximation to these orbits. The relevant 2P orbits on the ligand 0 sites and a d orbit free from MH splitting are taken into account with the use of the Hartree-Fock approximation. The calculated result shows that the daz'-r' orbit can cause the MH band occupied by about one d-hole, while it is very difficult for the dx'-Y' orbit to form a MH band lying above the top valence band.
La2CuO4中的莫特-哈伯德带
电荷转移型绝缘体LazCuO中的Mott-Hubbard (MH)带。这是从理论上进行研究的。在这两种情况下,3dx'-y'或3daz'-r'轨道在Cu位点上(与z轴垂直于CuOz平面)形成mh波段,通过对这些轨道应用Hubbard近似来检验。利用Hartree-Fock近似考虑了配体0位上的相关2P轨道和没有MH分裂的d轨道。计算结果表明,daz'-r'轨道能使MH带占据约1个d空穴,而dx'-Y'轨道很难形成位于顶价带以上的MH带。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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