All-Pass Filter Based Linear Voltage Controlled Quadrature Oscillator

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2017-01-01 DOI:10.1155/2017/3454165

K. Mathur, P. Venkateswaran, R. Nandi

引用次数: 5

Abstract

A linear voltage controlled quadrature oscillator implemented from a first-order electronically tunable all-pass filter (ETAF) is presented. The active element is commercially available current feedback amplifier (AD844) in conjunction with the relatively new Multiplication Mode Current Conveyor (MMCC) device. Electronic tunability is obtained by the control node voltage () of the MMCC. Effects of the device nonidealities, namely, the parasitic capacitors and the roll-off poles of the port-transfer ratios of the device, are shown to be negligible, even though the usable high-frequency ranges are constrained by these imperfections. Subsequently the filter is looped with an electronically tunable integrator (ETI) to implement the quadrature oscillator (QO). Experimental responses on the voltage tunable phase of the filter and the linear-tuning law of the quadrature oscillator up to 9.9 MHz at low THD are verified by simulation and hardware tests.

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基于全通滤波器的线性压控正交振荡器

提出了一种由一阶电子可调谐全通滤波器(ETAF)实现的线性压控正交振荡器。有源元件是市售的电流反馈放大器(AD844)与相对较新的倍增模式电流传送带(MMCC)装置相结合。通过MMCC的控制节点电压获得电子可调性。器件非理想性的影响，即寄生电容器和器件端口传输比的滚降极，被证明是可以忽略不计的，即使可用的高频范围受到这些缺陷的限制。随后，滤波器与电子可调谐积分器(ETI)相环，以实现正交振荡器(QO)。通过仿真和硬件测试验证了滤波器电压可调相位的实验响应和低THD下高达9.9 MHz的正交振荡器的线性调谐规律。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.