Implementation of Power Efficient Flash Analogue-to-Digital Converter

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
T. Lakshmi, Avireni Srinivasulu, P. C. Shaker
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引用次数: 11

Abstract

An efficient low power high speed 5-bit 5-GS/s flash analogue-to-digital converter (ADC) is proposed in this paper. The designing of a thermometer code to binary code is one of the exacting issues of low power flash ADC. The embodiment consists of two main blocks, a comparator and a digital encoder. To reduce the metastability and the effect of bubble errors, the thermometer code is converted into the gray code and there after translated to binary code through encoder. The proposed encoder is thus implemented by using differential cascade voltage switch logic (DCVSL) to maintain high speed and low power dissipation. The proposed 5-bit flash ADC is designed using Cadence 180 nm CMOS technology with a supply rail voltage typically ±0.85 V. The simulation results include a total power dissipation of 46.69 mW, integral nonlinearity (INL) value of −0.30 LSB and differential nonlinearity (DNL) value of −0.24 LSB, of the flash ADC.
节能型闪存模数转换器的实现
提出了一种高效的低功耗高速5位5-GS/s闪存模数转换器(ADC)。温度计码转换成二进制码的设计是低功耗闪存ADC的难点之一。实施例包括两个主要块、比较器和数字编码器。为了减少亚稳态和气泡误差的影响,将温度计码转换为灰度码,再通过编码器转换为二进制码。因此,该编码器采用差分级联电压开关逻辑(DCVSL)实现,以保持高速度和低功耗。所提出的5位闪存ADC采用Cadence 180 nm CMOS技术设计,电源轨电压通常为±0.85 V。仿真结果表明,flash ADC的总功耗为46.69 mW,积分非线性(INL)值为−0.30 LSB,微分非线性(DNL)值为−0.24 LSB。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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