Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2014-04-17 DOI:10.1155/2014/434189

Zhengyu Sun, Yuepeng Yan

引用次数: 0

Abstract

A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper amplifier to maintain a broad bandwidth while covering a wide gain range. Postlayout simulation results confirm that the proposed circuit achieves a 2 GHz 3-dB bandwidth with wide linear-in-dB gain tuning range from −19 dB up to 61 dB. The amplifier offers a competitive gain bandwidth product of 2805 GHz at the maximum gain for a 110-GHz ft BiCMOS technology. The amplifier core consumes 31 mW from a 3.3 V supply and occupies active area of 280 μm by 140 μm.

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增益范围为80db的2 GHz线性db可变增益放大器的设计

采用0.18 μm SiGe BiCMOS工艺实现了宽带线性- db可变增益放大器(VGA)电路。VGA包括两个级联可变增益核心，其中在Cherry-Hooper放大器中插入混合电流转向电流增益单元，以保持宽带宽，同时覆盖宽增益范围。布局后仿真结果证实，该电路实现了2 GHz的3db带宽，具有从- 19 dB到61 dB的宽线性增益调谐范围。该放大器在110 GHz ft BiCMOS技术的最大增益下提供具有竞争力的2805 GHz增益带宽产品。放大器芯在3.3 V电源下消耗31mw，占用280 μm × 140 μm的有效面积。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.