Low Dark Current Mesa-Type AlGaN Flame Detectors

4区材料科学 Q2 Engineering

Advances in Materials Science and Engineering Pub Date : 2007-11-18 DOI:10.1155/2007/62825

Lung-Chien Chen

引用次数: 0

Abstract

This study characterizes and reports on the fabrication process of AlGaN flame photodetectors with an Al0.1Ga0.9N/GaN superlattice structure. The AlGaN flame photodetectors exhibited a low dark current (∼1.17×10−10 A at bias of −5 V) and large rejection ratio of photocurrent (∼2.14×10−5 A at bias of -5 V) to dark current, which is greater than five orders of magnitude. Responsivity at 350 nm at a bias of -5 V was 0.194 A/W. Quantum efficiency, η, was 0.687 at a reverse bias of 5 V.

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低暗电流台面型海藻火焰探测器

本文研究并报道了Al0.1Ga0.9N/GaN超晶格结构的AlGaN火焰光电探测器的制备过程。AlGaN火焰光电探测器具有较低的暗电流(−1.17×10−10 a，偏置为−5 V)和较大的光电流(−2.14×10−5 a，偏置为-5 V)对暗电流的抑制比，大于5个数量级。在-5 V偏置下，350 nm处的响应度为0.194 a /W。在反向偏置5 V时，量子效率η为0.687。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advances in Materials Science and Engineering Materials Science-General Materials Science

CiteScore

3.30

自引率

0.00%

发文量

审稿时长

4-8 weeks

期刊介绍： Advances in Materials Science and Engineering is a broad scope journal that publishes articles in all areas of materials science and engineering including, but not limited to: -Chemistry and fundamental properties of matter -Material synthesis, fabrication, manufacture, and processing -Magnetic, electrical, thermal, and optical properties of materials -Strength, durability, and mechanical behaviour of materials -Consideration of materials in structural design, modelling, and engineering -Green and renewable materials, and consideration of materials’ life cycles -Materials in specialist applications (such as medicine, energy, aerospace, and nanotechnology)