Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor

IF 3.1 4区 工程技术 Q2 ELECTROCHEMISTRY
Li‐shuenn Wang, Mou‐shiung Lin
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引用次数: 0

Abstract

The charge-to-breakdown (Q bd ) for p + -poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boron-implanted poly-Si samples, Q bd (+) increases with dopant concentration, but Q bd (-) decreases with the boron concentration. Meanw ile a large difference was found between the Q bd (+) and Q bd (-) values. Evidence for various degree of band bending of poly-Si was observed from C-V and Fowler-Nordheim tunneling measurements. From gate-voltage shift (ΔV g ) data after constant current stress, the centroid of the generated positive trapped charge can be determined. We modified the charge-trapping model to explain the above Q bd behavior. Hole trapping is the cause of oxide breakdown. The observed difference between gate-positive and gate-negative Q bd is due to a polarity-dependent critical trapped charge density which depends on the critical electrical field somehow related to the boron implantation. As the generated positive trapped charge reaches a critical value, part of the localized electric field near the anode disappears and the remaining part of the electric field (E) is enhanced. This critical E field triggers thermal runaway and oxide breakdown. Therefore, we determine that the amount of Q bd is related to the boron implantation.
p+ -聚硅金属氧化物半导体电容器薄栅氧化物电荷击穿的定量研究
研究了p + -多晶硅MOS电容器在正、负栅极偏置应力下的电荷击穿特性。在不同硼注入多晶硅样品中,qbd(+)随掺杂浓度的增加而增加,而qbd(-)随掺杂浓度的增加而降低。同时,qbd(+)值与qbd(-)值之间存在较大差异。从C-V和Fowler-Nordheim隧道测量中观察到多晶硅不同程度的能带弯曲的证据。从恒流应力后的栅极电压位移(ΔV g)数据可以确定产生的正捕获电荷的质心。我们修改了电荷捕获模型来解释上述qbd行为。空穴捕获是氧化物分解的原因。所观察到的栅正和栅负qbd之间的差异是由于极性依赖的临界捕获电荷密度,该密度取决于与硼注入有关的临界电场。当产生的正捕获电荷达到临界值时,阳极附近的局部电场部分消失,剩余部分电场(E)增强。这个临界E场触发热失控和氧化物击穿。因此,我们确定qbd的量与硼的注入有关。
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来源期刊
CiteScore
7.20
自引率
12.80%
发文量
1369
审稿时长
1.5 months
期刊介绍: The Journal of The Electrochemical Society (JES) is the leader in the field of solid-state and electrochemical science and technology. This peer-reviewed journal publishes an average of 450 pages of 70 articles each month. Articles are posted online, with a monthly paper edition following electronic publication. The ECS membership benefits package includes access to the electronic edition of this journal.
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