A Resistor-Less nW-Level Bandgap Reference With Fine-Grained Voltage and Temperature Coefficient Trims

IF 2.4 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ori Bass;Asaf Feldman;Joseph Shor
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引用次数: 1

Abstract

A nW-level BJT-based bandgap reference with fine grained voltage and temperature coefficient trimming is presented. The bandgap reference utilizes switched capacitors (SC) as impedance elements instead of resistors in a current mode configuration. This configuration enabled low power (38nW) with a minimal area (0.0174 mm2). The voltage could be trimmed independently without affecting the temperature coefficient. The SC’s are stacked in order to achieve accurate trimming without using unrealistically small capacitors. The temperature coefficient can be trimmed between 50-200 ppm/°C in either direction, while the voltage can be trimmed between 580-800mV.
具有细粒度电压和温度系数的无电阻nw级带隙基准
提出了一种具有细粒度电压和温度系数微调的nw级bjt带隙基准。带隙基准在电流模式配置中使用开关电容(SC)作为阻抗元件而不是电阻。该配置支持低功耗(38nW)和最小面积(0.0174 mm2)。电压可以在不影响温度系数的情况下独立调整。SC的堆叠是为了实现精确的修剪,而不使用不切实际的小电容器。温度系数可以在50-200 ppm/°C之间任意方向修剪,而电压可以在580-800mV之间修剪。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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