{"title":"SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits","authors":"Hung-Chi Han;Antonio D’Amico;Christian Enz","doi":"10.1109/OJCAS.2022.3179046","DOIUrl":null,"url":null,"abstract":"This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV parameters automatically from the given \n<inline-formula> <tex-math>$I$ </tex-math></inline-formula>\n-\n<inline-formula> <tex-math>$V$ </tex-math></inline-formula>\n curves using the direct extraction and the multi-stage optimization process. It also handles the overfitting issue because of non-linear least squares. Moreover, this work demonstrates the SEKV-E as a universal tool by widely applying it to different silicon technologies, temperatures, dimensions, and back-gate voltages.","PeriodicalId":93442,"journal":{"name":"IEEE open journal of circuits and systems","volume":null,"pages":null},"PeriodicalIF":2.4000,"publicationDate":"2022-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9896232","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE open journal of circuits and systems","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/9896232/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV parameters automatically from the given
$I$
-
$V$
curves using the direct extraction and the multi-stage optimization process. It also handles the overfitting issue because of non-linear least squares. Moreover, this work demonstrates the SEKV-E as a universal tool by widely applying it to different silicon technologies, temperatures, dimensions, and back-gate voltages.
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