Investigation on Fractional Bandwidth Enhancement of a Resonant Absorber

Manish Mathew Tirkey, N. Gupta
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引用次数: 0

Abstract

Limitation of the absorption band is an inherent problem in the resonant absorbers. An investigation carried out to address this problem is presented in this magazine. Initially, we have designed a resonant absorber using the conventional metal-insulator-metal configuration, which provides a narrow fractional bandwidth (FBW) of 3.4%. Then the FBW of the absorber is increased up to 28.4% by modifying the conventional configuration while maintaining the same resonant frequency for both absorbers. Generally, it is observed that the reflection coefficient of the absorber increases with the increase in its bandwidth. However, the proposed absorber increases the FBW as well as reduces the reflection coefficient simultaneously and achieves superior performance than the conventional resonant absorber. In addition, the proposed absorber is compact, thin, polarization-insensitive, and angularly stable.
共振吸收器分数阶带宽增强研究
吸收带的限制是谐振式吸收器固有的问题。本杂志介绍了为解决这个问题而进行的一项调查。最初,我们设计了一个使用传统金属-绝缘体-金属结构的谐振吸收器,它提供了3.4%的窄分数带宽(FBW)。在保持两种吸波器谐振频率不变的情况下,通过改变传统结构,使吸波器的FBW提高到28.4%。通常,可以观察到吸收器的反射系数随其带宽的增加而增加。然而,该吸收器在提高FBW的同时降低了反射系数,取得了比传统谐振吸收器更好的性能。此外,所提出的吸收剂是紧凑的,薄,极化不敏感,和角度稳定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
0.80
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