Band shifting and magnetic anisotropy switching induced by electric field in CrI3/1T′-MX2 heterojunction

IF 3.2 3区 物理与天体物理 Q2 PHYSICS, APPLIED
Zebin Wu, Xin Liu, Z. Shen, Yufei Xue, Xiaoping Wu, T. Zhong, Jingjing Wang, Jiaqi Pan, Chaorong Li, Changsheng Song
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引用次数: 3

Abstract

Manipulating magnetism by the electric field (EF) is a well-established technology that has been applied in two-dimensional materials systems. Here, based on first-principles calculations, we study the influence of the EF on the band structure and magnetic characteristics of the CrI3/1T′-MX2 heterojunction. The results show amounts of charge exchange at the interface accompanying an obvious band shifting at the Γ point around the Fermi level. The magnetic moment of CrI3/1T′-MX2 is visibly increased under an external EF relative to isolated CrI3. Particularly, the magnetic anisotropy of CrI3/1T′-MX2 switching from out-of-plane to in-plane can be modulated by the EF, while this change does not occur in isolated CrI3. In addition, the topological properties of the heterojunction are still preserved by a nontrivial topological invariant Z 2 = 1. Our findings provide theoretical guidance for the spintronic application of CrI3/1T′-MX2 materials.
电场诱导CrI3/1T′-MX2异质结的带移和磁各向异性开关
利用电场操纵磁场是一项成熟的技术,已在二维材料系统中得到应用。本文基于第一性原理计算,研究了EF对CrI3/1T′-MX2异质结的能带结构和磁特性的影响。结果表明,在费米能级附近的Γ点处,界面处的电荷交换量伴随着明显的带移。相对于孤立的CrI3,外部EF下CrI3/ 1t′-MX2的磁矩明显增加。特别是,CrI3/ 1t ' -MX2从面外切换到面内的磁各向异性可以被EF调制,而这种变化在孤立的CrI3中不会发生。此外,异质结的拓扑性质仍然由非平凡拓扑不变量z2 = 1保持。研究结果为CrI3/1T′-MX2材料的自旋电子应用提供了理论指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics 物理-物理:应用
CiteScore
6.80
自引率
8.80%
发文量
835
审稿时长
2.1 months
期刊介绍: This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
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