Wenjing Zhang, Fumeng Ren, Yu Wen, Zhangwang Xu, Juan Sun, Zhenzhen Yan, Lei Ding, Xia Hai, Qin Zhang
{"title":"Enhancing Hole Transport of Quantum-Dot Light-Emitting Diodes by a Cruciform Oligothiophene for Effective p-Type Doping","authors":"Wenjing Zhang, Fumeng Ren, Yu Wen, Zhangwang Xu, Juan Sun, Zhenzhen Yan, Lei Ding, Xia Hai, Qin Zhang","doi":"10.1002/marc.202200187","DOIUrl":null,"url":null,"abstract":"<p>Effective p-type doping is essential to enhance hole transport and balance electron–hole injection in quantum dot light-emitting diodes (QLEDs). Here, an oligothiophene material is adopted as a p-type dopant in the hole-transport layer, considering its cruciform cross-center structure, precise molecular weight, and high purity. Compared with the dopant-free counterpart, hole transport capability at the optimal doping level exhibits a significant improvement, producing a boosted external quantum efficiency (EQE) and luminance up to 20.8%, 213 439 cd m<sup>–2</sup>, respectively, among the highest reported on the red-light emission. The work indicates the potential applications of oligothiophene material in red light-emitting devices.</p>","PeriodicalId":205,"journal":{"name":"Macromolecular Rapid Communications","volume":"43 15","pages":""},"PeriodicalIF":4.1000,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Macromolecular Rapid Communications","FirstCategoryId":"92","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/marc.202200187","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"POLYMER SCIENCE","Score":null,"Total":0}
引用次数: 0
Abstract
Effective p-type doping is essential to enhance hole transport and balance electron–hole injection in quantum dot light-emitting diodes (QLEDs). Here, an oligothiophene material is adopted as a p-type dopant in the hole-transport layer, considering its cruciform cross-center structure, precise molecular weight, and high purity. Compared with the dopant-free counterpart, hole transport capability at the optimal doping level exhibits a significant improvement, producing a boosted external quantum efficiency (EQE) and luminance up to 20.8%, 213 439 cd m–2, respectively, among the highest reported on the red-light emission. The work indicates the potential applications of oligothiophene material in red light-emitting devices.
有效的p型掺杂是增强量子点发光二极管空穴输运和平衡电子-空穴注入的关键。考虑到其十字交叉中心结构、精确的分子量和高纯度，本文在空穴输运层中采用了一种寡硫吩材料作为p型掺杂剂。与无掺杂相比，最优掺杂水平下的空穴输运能力有了显著提高，外量子效率(EQE)和亮度分别提高了20.8% (213 439 cd m-2)，是红光发射中最高的。研究结果表明，低聚噻吩材料在红光发光器件中的应用前景广阔。
期刊介绍：
Macromolecular Rapid Communications publishes original research in polymer science, ranging from chemistry and physics of polymers to polymers in materials science and life sciences.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
