Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2001-10-16 DOI:10.1063/1.1412591

Xuhong Hu, A. Koudymov, G. Simin, J. Yang, M. Khan, A. Tarakji, M. Shur, R. Gaska

引用次数: 237

Abstract

We report on a metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse.

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Si3N4/AlGaN/ gan -金属绝缘体-半导体异质结构场效应晶体管

本文报道了一种金属-绝缘体-半导体异质结构场效应晶体管(MISHFET)，该晶体管使用Si3N4薄膜同时用于沟道钝化和栅极绝缘体。这种设计通过减少电流崩溃导致射频(rf)功率的增加，并将栅极泄漏电流降低了四个数量级。在室温下，MISHFET的栅极电流约为90pa /mm，在环境温度高达300℃时，栅极电流仅为1000pa /mm。脉冲测量表明，与金属氧化物半导体hfet和常规hfet不同，在Si3N4 MISHFET中，电流崩溃所需的栅极电压幅值远高于阈值电压。因此，它表现出显著减少的射频电流崩溃。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.