Influence of carrier transport on modulation characteristics of quantum-well semiconductor lasers

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-06-30 DOI:10.1007/s10825-023-02060-6

Moustafa Ahmed, Maan Al-Alhumaidi

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Abstract

We discuss modeling the influence of carrier transport phenomena in quantum well (QW) semiconductor lasers on the device's current modulation characteristics. The escape and capture of charge carriers between the QW and the separate confinement heterostructure (SCH) are considered the major carrier transport phenomena. The small-signal analysis is applied to linearize the QW laser's rate equations and obtain expressions for the intensity modulation (IM) response. The carrier transport is assessed in terms of the lifetimes of the carrier escape and capture processes. In this study, we evaluated the impacts of these transport times on both the modulation bandwidth and response peak frequency. In addition, we used the obtained results to assess the tolerance of using the simple standard two-rate equation (STREs) model to describe the modulation properties of QW lasers. We demonstrate that when the capture lifetime is less than 20 ps and the escape lifetime is greater than 0.1 ps, the modulation bandwidth and response peak frequency reach their maximum values, which interestingly match the results simulated by the STRE model. With departures from the ideal ranges of these transport lifetimes, the tolerance of applying STREs becomes poorer. The findings in this study advance and supplement the theory and simulation of QW laser diodes.

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载流子输运对量子阱半导体激光器调制特性的影响

讨论了量子阱半导体激光器中载流子输运现象对器件电流调制特性的影响。载流子在量子阱和分离约束异质结构(SCH)之间的逃逸和捕获被认为是载流子输运的主要现象。利用小信号分析方法对QW激光器的速率方程进行线性化，得到了强度调制响应的表达式。根据载流子逃逸和捕获过程的寿命来评估载流子迁移。在本研究中，我们评估了这些传输时间对调制带宽和响应峰值频率的影响。此外，我们还利用得到的结果评估了用简单标准双速率方程(STREs)模型描述量子w激光器调制特性的容差。结果表明，当捕获寿命小于20ps，逃逸寿命大于0.1 ps时，调制带宽和响应峰值频率达到最大值，这与STRE模型的模拟结果非常吻合。当偏离这些传输寿命的理想范围时，施加应力的容忍度就会变差。本研究的结果为量子w激光二极管的理论和仿真提供了补充。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.